Labs, Projects, Capstones & Reference
Labs, Projects, Capstones & Reference: Semiconductor Labs, Simulation Track & Project Ladder, Capstones: Characterization Platform & Power Device Analysis, Formula Reference, Comparison Tables & Glossary.
- Semiconductor Labs, Simulation Track & Project Ladder — Hands-on learning path. A 25-lab sequence from material basics to failure analysis (diode forward/reverse, Zener, Schottky comparison, LED, photodiode, BJT input/output/β/Q-point, JFET, MOSFET transfer/output/switching, CMOS inverter, MOS C–V simulation, power MOSFET loss, IGBT comparison, solar cell, Hall sensor, temperature dependence, thermal measurement, SPICE modelling, parameter extraction, failure-analysis case study), each with objective, theory, equipment, schematic, procedure, expected results, measurements, graphs, calculations, safety, troubleshooting and questions; a simulation track (LTspice, ngspice, PSpice, QSPICE, KiCad, Python); and a project ladder from beginner to professional — with Python processing sample lab data (β table, Early voltage, diode temperature coefficient).
- Capstones: Characterization Platform & Power Device Analysis — Two professional capstones. (1) Semiconductor device characterization platform: import measurement data, plot I–V/C–V curves, extract parameters (I_S, n, R_s, V_T, µ, β, V_A, doping), compare temperatures, fit curves, generate SPICE models, compare simulation with measurement, compute errors, compare with datasheets, classify devices and export engineering reports, with explanations of every parameter. (2) Power semiconductor analysis: compare Si MOSFET, IGBT, SiC and GaN from datasheet parameters under stated operating conditions — conduction and switching losses, thermal model and junction temperature, efficiency, and a design recommendation based on requirements rather than universal ranking — with Python comparing four device technologies at 20, 100 and 300 kHz.
- Formula Reference, Comparison Tables & Glossary — Everything in one place. Formula cards for semiconductor physics (np = n_i², σ, ρ, J_drift, L = √(Dτ)), PN junctions (V_bi, W, diode equation), BJTs (I_E = I_C + I_B, β, α, g_m), MOSFETs (region-specific equations), thermal (T_J = T_A + Pθ_JA), CMOS (P = αCV²f) and optoelectronics (photon energy, responsivity, QE, solar efficiency) — each with symbols, units, assumptions and validity; engineering comparison tables (conductor/semiconductor/insulator, intrinsic/extrinsic, N/P, drift/diffusion, PN/Schottky, Zener/avalanche, BJT/JFET/MOSFET, NPN/PNP, enhancement/depletion, NMOS/PMOS, planar/FinFET/GAA, Si/SiC/GaN, MOSFET/IGBT, SCR/TRIAC/GTO/IGCT, LED/laser, PN/PIN/APD, solar cell/photodiode, SRAM/DRAM/flash, bulk/SOI, wire bond/flip-chip, conventional/advanced packaging); a searchable glossary; and a Python formula self-check.